F59L512M81A
F59L512M81A is 512Mbit (64M x 8) 3.3V NAND Flash Memory manufactured by Elite Semiconductor Microelectronics Technology.
ESMT
Flash
Features
- Voltage Supply: 2.7V ~ 3.6V
- Organization
- Memory Cell Array: (64M + 2M) x 8bit
- Data Register: (2K + 64) x 8bit
- Automatic Program and Erase
- Page Program: (2K + 64) Byte
- Block Erase: (128K + 4K) Byte
- Page Read Operation
- Page Size: (2K + 64) Byte
- Random Read: 25us (Max.)
- Serial Access: 25ns (Min.)
- Memory Cell: 1bit/Memory Cell
- Fast Write Cycle Time
- Program time: 250us (Typ.)
- Block Erase time: 2ms (Typ.)
- mand/Address/Data Multiplexed I/O Port
- Hardware Data Protection
- Program/Erase Lockout During Power Transitions
- Reliable CMOS Floating Gate Technology
- ECC Requirement: 4 bit/512 Byte
- Endurance: 100K Program/Erase cycles
- Data...
