Datasheet4U Logo Datasheet4U.com

F59L512M81A - 512Mbit (64M x 8) 3.3V NAND Flash Memory

General Description

The device is a 64Mx8bit with spare 2Mx8bit capacity.

The device is offered in 3.3V VCC Power Supply.

Its NAND cell provides the most cost-effective solution for the solid state mass storage market.

Key Features

  • Voltage Supply: 2.7V ~ 3.6V.
  • Organization - Memory Cell Array: (64M + 2M) x 8bit - Data Register: (2K + 64) x 8bit.
  • Automatic Program and Erase - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte.
  • Page Read Operation - Page Size: (2K + 64) Byte - Random Read: 25us (Max. ) - Serial Access: 25ns (Min. ).
  • Memory Cell: 1bit/Memory Cell.
  • Fast Write Cycle Time - Program time: 250us (Typ. ) - Block Erase time: 2ms (Typ. ).
  • Command/Address/Data Multiplexed I/O.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
F59L1G81LA 1 Gbit (128M x 8) 3.3V NAND Flash Memory ESMT
F59L1G81LB 1 Gbit (128M x 8) 3.3V NAND Flash Memory ESMT
F59L1G81LB-25BCG2M 1 Gbit (128M x 8) 3.3V NAND Flash Memory ESMT
F59L1G81LB-25BG2M 1 Gbit (128M x 8) 3.3V NAND Flash Memory ESMT
F59L1G81LB-25TG2M 1 Gbit (128M x 8) 3.3V NAND Flash Memory ESMT

Other Datasheets by ESMT (Elite Semiconductor Microelectronics Technology)

Part Number Description
F59L1G81A 1 Gbit (128M x 8) 3.3V NAND Flash Memory
F59L2G81A 2 Gbit (256M x 8) 3.3V NAND Flash Memory
F59L4G81A 4 Gbit (512M x 8) 3.3V NAND Flash Memory
F59D1G161A 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
F59D1G81A 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
ESMT Flash FEATURES  Voltage Supply: 2.7V ~ 3.6V  Organization - Memory Cell Array: (64M + 2M) x 8bit - Data Register: (2K + 64) x 8bit  Automatic Program and Erase - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte  Page Read Operation - Page Size: (2K + 64) Byte - Random Read: 25us (Max.) - Serial Access: 25ns (Min.)  Memory Cell: 1bit/Memory Cell  Fast Write Cycle Time - Program time: 250us (Typ.) - Block Erase time: 2ms (Typ.)  Command/Address/Data Multiplexed I/O Port  Hardware Data Protection - Program/Erase Lockout During Power Transitions  Reliable CMOS Floating Gate Technology - ECC Requirement: 4 bit/512 Byte - Endurance: 100K Program/Erase cycles - Data Retention: 10 years F59L512M81A 512Mbit (64M x 8) 3.