2-Gbit Datasheet | Specifications & PDF Download

ESMT Flash PRODUCT LIST Parameters VCC Width Frequency Internal ECC Correction Transfer Rate Loading Throughput Power-up Ready Time Max Reset Busy Tim

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1 H27U1G8F2B Series 1 Gbit (128 M x 8 bit) NAND Flash 1 Gb NAND Flash H27U1G8F2B This document is a general product description and is subject to ch

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ESMT Flash PRODUCT LIST Parameters VCC Width Frequency Internal ECC Correction Transfer Rate Loading Throughput Power-up Ready Time Max Reset Busy Tim

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Revision History For 2Gbit /4Gbit/8Gbit LPDDR4X SDRAM 200ball FBGA Package Revision Rev 1.0 Rev 1.1 Details Initial Release Add 2Gb,4Gb LPDDR4X Dat

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Revision History For 2Gbit /4Gbit/8Gbit LPDDR4X SDRAM 200ball FBGA Package Revision Rev 1.0 Rev 1.1 Details Initial Release Add 2Gb,4Gb LPDDR4X Dat

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ESMT Flash FEATURES  Voltage Supply ­ VCC: 3.3V (2.7 V ~ 3.6V)  Organization ­ Page Size: (2K + 128) bytes ­ Data Register: (2K + 128) bytes ­ Block

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ESMT Flash FEATURES  Voltage Supply ­ VCC: 3.3V (2.7 V ~ 3.6V)  Organization ­ Page Size: (2K + 128) bytes ­ Data Register: (2K + 128) bytes ­ Block

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ESMT Flash FEATURES  Voltage Supply ­ VCC: 3.3V (2.7 V ~ 3.6V)  Organization ­ Page Size: (2K + 128) bytes ­ Data Register: (2K + 128) bytes ­ Block

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Revision History For 2Gbit /4Gbit/8Gbit LPDDR4X SDRAM 200ball FBGA Package Revision Rev 1.0 Rev 1.1 Details Initial Release Add 2Gb,4Gb LPDDR4X Dat

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ESMT Flash PRODUCT LIST Parameters VCC Width Frequency Internal ECC Correction Transfer Rate Loading Throughput Power-up Ready Time Max Reset Busy Tim

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TC58NVG0S3HTA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1G BIT (128M  8 BIT) CMOS NAND E2PROM DESCRIPTION The TC58NVG0S3HTA00 is a

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ESMT Flash PRODUCT LIST Parameters VCC Width Frequency Internal ECC Correction Transfer Rate Loading Throughput Power-up Ready Time Max Reset Busy Tim

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Sep. 2020 SCB13H4Gxx0AF 4Gbit DDR3L SDRAM EU RoHS Compliant Products Data Sheet Rev. G Data Sheet SCB13H4Gxx0AF 4-Gbit DDR3L SDRAM Revision History

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ESMT Flash FEATURES Voltage Supply: 3.3V (2.7V~3.6V) Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic

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Sep. 2020 SCB13H4Gxx0AF 4Gbit DDR3L SDRAM EU RoHS Compliant Products Data Sheet Rev. G Data Sheet SCB13H4Gxx0AF 4-Gbit DDR3L SDRAM Revision History

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Preliminary Data Sheet January 1998 LG1628AXA SONET/SDH 2.488 Gbits/s Transimpedance Amplifier Features s s s s s s High data rate: 2.5 Gbits/s High

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2Gbit SPI NAND Flash F35SQA002G Datasheet FORESEE ®users.A8D12C1BB0124FB 2022-07-25 092:5G6 bit SPI NAND Flash F35SQA002G Datasheet LM-00006 Rev

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TOSHIBA CONFIDENTIAL TENTATIVE TC58NVG6D2GTA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 64 GBIT (8G  8 BIT) CMOS NAND E PROM (Mu

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