F59D4G81KA - 4-Gbit 1.8V NAND Flash Memory
The device has 4352-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 4352-byte increments.
The Erase operation is implemented in a single block unit (256Kbytes + 16Kbytes).
The device is a memory device which utilizes the I/O
F59D4G81KA Features
* Voltage Supply VCC: 1.8V (1.7 V ~ 1.95V)
* Organization Page Size: (4K + 256) bytes Data Register: (4K + 256) bytes Block Size: 64Pages = (256K + 16K) bytes Number of Planes: 1 Number of Block per Die (LUN)= 2048
* Automatic Program and Erase Page Program: (4K + 256) byte
