Datasheet4U Logo Datasheet4U.com

F59D4G81CA-45BG2L

4 Gbit (512M x 8) 1.8V NAND Flash Memory

F59D4G81CA-45BG2L Features

* Organization

* Memory cell array 4352 × 128K × 8

* Register 4352 × 8

* Page size 4352 bytes

* Block size (256K + 16K) bytes

* Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Co

F59D4G81CA-45BG2L Datasheet (2.42 MB)

Preview of F59D4G81CA-45BG2L PDF

Datasheet Details

Part number:

F59D4G81CA-45BG2L

Manufacturer:

ESMT

File Size:

2.42 MB

Description:

4 gbit (512m x 8) 1.8v nand flash memory.

📁 Related Datasheet

F59D4G81A - 4 Gbit (512M x 8 / 256M x 16) 1.8V NAND Flash Memory (Elite Semiconductor)
ESMT Flash FEATURES  Voltage Supply: 1.8V (1.7V ~ 1.95V)  Organization x8: - Memory Cell Array: (512M + 8M) x 8bit - Data Register: (2K + 64) x 8bit.

F59D4G81KA - 4-Gbit 1.8V NAND Flash Memory (ESMT)
ESMT Flash FEATURES  Voltage Supply ­ VCC: 1.8V (1.7 V ~ 1.95V)  Organization ­ Page Size: (4K + 256) bytes ­ Data Register: (4K + 256) bytes ­ Bloc.

F59D4G81XB - 1.8V NAND Flash Memory (ESMT)
ESMT Flash FEATURES  Voltage Supply: 1.8V (1.7 V ~ 1.95V)  Open NAND Flash Interface (ONFI) 1.0-pliant  Single-level cell (SLC) technology  Org.

F59D4G161A - 4 Gbit (512M x 8 / 256M x 16) 1.8V NAND Flash Memory (Elite Semiconductor)
ESMT Flash FEATURES  Voltage Supply: 1.8V (1.7V ~ 1.95V)  Organization x8: - Memory Cell Array: (512M + 8M) x 8bit - Data Register: (2K + 64) x 8bit.

F59D1G161A - 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory (Elite Semiconductor)
ESMT Flash FEATURES  Voltage Supply: 1.8V (1.7 V ~ 1.95V)  Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi.

F59D1G161LB-45BG2M - 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory (ESMT)
ESMT Flash FEATURES  Voltage Supply: 1.8V (1.7 V ~ 1.95V)  Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi.

F59D1G161LB-45TG2M - 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory (ESMT)
ESMT Flash FEATURES  Voltage Supply: 1.8V (1.7 V ~ 1.95V)  Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi.

F59D1G161MA-45BG2L - 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory (ESMT)
ESMT Flash FEATURES z Voltage Supply: 1.8V (1.7 V ~ 1.95V) z Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bi.

TAGS

F59D4G81CA-45BG2L Gbit 512M 1.8V NAND Flash Memory ESMT

Image Gallery

F59D4G81CA-45BG2L Datasheet Preview Page 2 F59D4G81CA-45BG2L Datasheet Preview Page 3

F59D4G81CA-45BG2L Distributor