F59L1G81LB-25TG2M Datasheet, Memory, ESMT

F59L1G81LB-25TG2M Features

• Memory
• Voltage Supply: 3.3V (2.7V~3.6V)
• Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit
• Automatic Program and Erase - Page

PDF File Details

Part number:

F59L1G81LB-25TG2M

Manufacturer:

ESMT

File Size:

2.25MB

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📄 Datasheet

Description:

1 gbit (128m x 8) 3.3v nand flash memory. The device is a 128Mx8bit with spare 4Mx8bit capacity. The device is offered in 3.3V Vcc Power Supply. Its NAND cell provides the mos

TAGS

F59L1G81LB-25TG2M

ESMT

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