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F59D1G81MB - 1.8V NAND Flash Memory

This page provides the datasheet information for the F59D1G81MB, a member of the F59D1G81MB-45TG2M 1.8V NAND Flash Memory family.

Description

The Device is a 128Mx8bit with spare 4Mx8bit capacity.

The device is offered in 1.8V Vcc Power Supply.

Its NAND cell provides the most cost-effective solution for the solid state mass storage market.

Features

  • Voltage Supply: 1.8V (1.7 V ~ 1.95V).
  • Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell Array: (64M + 2M) x 16bit - Data Register: (1K + 32) x 16bit.
  • Automatic Program and Erase x8: - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte x16: - Page Program: (1K + 32) Word - Block Erase: (64K + 2K) Word.
  • Page Read Operation x8 - Page Size: (2K + 64) Byte (x8) - Random Read: 25us (Max. ) - Serial Access: 45ns (.

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Datasheet preview – F59D1G81MB

Datasheet Details

Part number F59D1G81MB
Manufacturer ESMT
File Size 2.37 MB
Description 1.8V NAND Flash Memory
Datasheet download datasheet F59D1G81MB Datasheet
Additional preview pages of the F59D1G81MB datasheet.

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Other Datasheets by ESMT

Full PDF Text Transcription

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ESMT Flash FEATURES  Voltage Supply: 1.8V (1.7 V ~ 1.95V)  Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell Array: (64M + 2M) x 16bit - Data Register: (1K + 32) x 16bit  Automatic Program and Erase x8: - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte x16: - Page Program: (1K + 32) Word - Block Erase: (64K + 2K) Word  Page Read Operation x8 - Page Size: (2K + 64) Byte (x8) - Random Read: 25us (Max.) - Serial Access: 45ns (Min.) x16 -Page Size: (1K + 32) Word (x16)  Memory Cell: 1bit/Memory Cell  Fast Write Cycle Time x8 - Program time: 300us (Typ.) - Block Erase time: 4ms (Typ.
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