F59D1G81MB Datasheet - ESMT

1.8V NAND Flash Memory

F59D1G81MB Features

* Voltage Supply: 1.8V (1.7 V ~ 1.95V)

* Organization x8: - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell Array: (64M + 2M) x 16bit - Data Register: (1K + 32) x 16bit

* Automatic Program and Erase x8: - Page Program: (2K + 64) Byte - Block Era

F59D1G81MB General Description

The Device is a 128Mx8bit with spare 4Mx8bit capacity. The device is offered in 1.8V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided into blocks that can be erased independently so it is possible to preserve val.

F59D1G81MB Datasheet (2.37 MB)

F59D1G81MB Datasheet Preview — Preview of F59D1G81MB PDF

Datasheet Details

Part number:

F59D1G81MB

Manufacturer:

ESMT

File Size:

2.37 MB

Description:

1.8v nand flash memory.

📁 Related Datasheet

F59D1G81MA-45BCG2L 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory (ESMT)

F59D1G81MA-45BG2L 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory (ESMT)

F59D1G81MA-45TG2L 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory (ESMT)

F59D1G81MB-45BCG2M 1.8V NAND Flash Memory (ESMT)

F59D1G81MB-45BG2M 1.8V NAND Flash Memory (ESMT)

F59D1G81MB-45BUG2M 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory (ESMT)

F59D1G81MB-45TG2M 1.8V NAND Flash Memory (ESMT)

F59D1G81A 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory (Elite Semiconductor)

F59D1G81LB-45BCG2M 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory (ESMT)

F59D1G81LB-45BG2M 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory (ESMT)

TAGS

F59D1G81MB 1.8V NAND Flash Memory ESMT

Image Gallery

F59D1G81MB Features

F59D1G81MB General Description

Datasheet Details

File Size:

Description:

F59D1G81MB Distributor