AFN5510S Datasheet, Mosfet, Alfa-MOS

AFN5510S Features

• Mosfet 100V/30A,RDS(ON)= 22mΩ@VGS=10V Super high density cell design for extremely low RDS (ON) TO-252-2L package design Pin Description ( TO-252-2L ) Application Primary Side Switch POL Syn

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Part number:

AFN5510S

Manufacturer:

Alfa-MOS

File Size:

834.65kb

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📄 Datasheet

Description:

N-channel enhancement mode mosfet. AFN5510S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These dev

AFN5510S Application

• Applications Features 100V/30A,RDS(ON)= 22mΩ@VGS=10V Super high density cell design for extremely low RDS (ON) TO-252-2L package design Pin Descr

TAGS

AFN5510S

Alfa-MOS

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