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AFN5008S, AFN5008S-Alfa Datasheet - Alfa-MOS

AFN5008S N-Channel Enhancement Mode MOSFET

AFN5008S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Descripti.

AFN5008S Features

* z 40V/20A,RDS(ON)= 8.5mΩ@VGS=10V z 40V/15A,RDS(ON)= 9.5mΩ@VGS=4.5V z Super high density cell design for extremely low RDS (ON) z TO-252-2L package design Application z LCD Display Backlight Inverters z DC/DC Converters Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Ordering No. P

AFN5008S-Alfa-MOS.pdf

This datasheet PDF includes multiple part numbers: AFN5008S, AFN5008S-Alfa. Please refer to the document for exact specifications by model.
AFN5008S Datasheet Preview Page 2 AFN5008S Datasheet Preview Page 3

Datasheet Details

Part number:

AFN5008S, AFN5008S-Alfa

Manufacturer:

Alfa-MOS

File Size:

410.42 KB

Description:

N-channel enhancement mode mosfet.

Note:

This datasheet PDF includes multiple part numbers: AFN5008S, AFN5008S-Alfa.
Please refer to the document for exact specifications by model.

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TAGS

AFN5008S AFN5008S-Alfa N-Channel Enhancement Mode MOSFET Alfa-MOS

AFN5008S Distributor