AFN5008S - N-Channel Enhancement Mode MOSFET
AFN5008S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Descripti
AFN5008S Features
* z 40V/20A,RDS(ON)= 8.5mΩ@VGS=10V z 40V/15A,RDS(ON)= 9.5mΩ@VGS=4.5V z Super high density cell design for extremely low RDS (ON) z TO-252-2L package design Application z LCD Display Backlight Inverters z DC/DC Converters Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Ordering No. P
