HAT Datasheet | Specifications & PDF Download

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FEATURES • Low Noise: 1 nV/√Hz input noise (60dB gain) 34 nV/√Hz input noise (0dB gain) (1512) • Low THD+N (full audio bandwidth): 0.001% ≤ 40 dB gain

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T H AT Corporation FEATURES · High common-mode rejection (typical 90 dB at 60 Hz) maintained under real-world conditions Excellent solution for hum an

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HAT2028R/HAT2028RJ Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-524C (Z) 4th. Edition February 1999 Features • • • • For Automo

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HAT1038R/HAT1038RJ Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-663C (Z) 4th. Edition February 1999 Features • • • • For Automo

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PWM LED LN2122 ■ LN2122 、 DC/DC ，0.9V-3.3V ， 。 CE PWM ，。， OVP 5.5V， 。， ，， 。， ， ，。 ■  0.9V—3.3V  5.5V  1.0MHz±20%  88%  ：

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M4ZXX-BR00SH ZEROPOWER SNAPHAT (Battery) s Provides Battery Backup Power for Non-Volatile ZEROPOWERs and Controllers in the SNAPHAT SOIC Package Remo

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HAT1139H Silicon P Channel Power MOS FET Power Switching Features • Capable of –4.5 V gate drive • Low drive current • High density mounting • Low on

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FEATURES • Wide Dynamic Range: >120 dB • Wide Gain Range: >130 dB • Exponential (dB) Gain Control • Low Distortion: < 0.01 % (2180A) • Wide Gain-Bandw

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RELAYS ✽ SINCE 1976 ✽ HAT-900 SERIES HEAVY DUTY SPDT 40A NORMALLY OPEN & 30A NORMALLY CLOSED GENERAL SPECIFICATIONS Contact Material: silver cadmium

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Ordering number : ENN6276B Monolithic Linear IC LA75675M-S VIF/SIF IF Signal-Processing Circuit that Supports NTSC Intercarrier for TV and VCR Produ

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RELAYS ✽ SINCE 1976 ✽ HAT-900 SERIES HEAVY DUTY SPDT 40A NORMALLY OPEN & 30A NORMALLY CLOSED GENERAL SPECIFICATIONS Contact Material: silver cadmium

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Ci2454 Ci2454 Rev1.3 2022/10/24 Ci2454 1 1.1 Ci2454 8 RISC（）MCU SOC 。 ：  2.4GHz ISM 。  ：GFSK/FSK。  ：2Mbps/1Mbps/250Kbps 。  BLE4.2 PHY&

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DC AXIAL FANS 12.15.14 E1225 series 4.72 ±0.02 (120 ±0.5) 4.13 ±0.01 (105 ±0.3) 0.98 ±0.02 (25 ±0.5) 0.19 0.19 (5) (5) STATIC PRESSURE - IN. OF W

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FEATURES • Balanced, transformer-like floating output • OutSmarts® technology improves clipping into single-ended loads • Stable driving long cables a

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HAT1020R Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-435 H (Z) 9th. Edition February 1999 Features • • • • Low on-resistance C

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HAT1023R Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-436 G (Z) 8th. Edition June 1997 Features • • • • Low on-resistance Capab

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FEATURES y Low Noise: 1 nV/√Hz input noise (60 dB gain) y Low THD+N: 0.0003% ≤ 30 dB gain 0.0008% @ 40 dB gain y Low Current: 7.5 mA typ y Wide Bandwi

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HAT2031T Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-529F (Z) 7th. Edition February 1999 Features • • • • Low on-resistance Ca

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