HAT1095C Silicon P Channel MOS FET Power Switching.
Renesas Technology
HAT1095C - Silicon P-Channel Power MOSFET
HAT1095C Silicon P Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 108 mΩ typ. (at VGS = –4.5 V) • Low drive current. • 1.8 V g.
