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HAT1095C Silicon P-Channel Power MOSFET

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Description

HAT1095C Silicon P Channel MOS FET Power Switching .

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Features

* Low on-resistance RDS(on) = 108 mΩ typ. (at VGS =
* 4.5 V)
* Low drive current.
* 1.8 V gate drive devices.
* High density mounting Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) Indexband 5 4 6 3 2 1 Data Sheet R07DS1174EJ0600 (Previous

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Silicon P-Channel Power MOSFET Renesas Technology
Renesas Technology HAT1095C-like datasheet