HAT1094C, Renesas Technology
HAT1094C
Silicon P Channel MOS FET Power Switching
REJ03G1231-0400 Rev.4.00 Feb 28, 2006
Features
• Low on-resistance RDS(on) = 67 mΩ typ. (at VGS = .
HAT1095C, Renesas Technology
HAT1095C
Silicon P Channel MOS FET Power Switching
Features
• Low on-resistance RDS(on) = 108 mΩ typ. (at VGS = –4.5 V)
• Low drive current. • 1.8 V g.
HAT1096C, Renesas Technology
HAT1096C
Silicon P Channel MOS FET Power Switching
REJ03G1233-0400 Rev.4.00 Jan 26, 2006
Features
• Low on-resistance RDS(on) = 225 mΩ typ. (at VGS =.
HAT1097R, Renesas Technology
HAT1097R, HAT1097RJ
Silicon P Channel Power MOS FET High Speed Power Switching
REJ03G0529-0100 Rev.1.00 Feb.15.2005
Features
• Low on-resistance • Ca.
HAT1097RJ, Renesas Technology
HAT1097R, HAT1097RJ
Silicon P Channel Power MOS FET High Speed Power Switching
REJ03G0529-0100 Rev.1.00 Feb.15.2005
Features
• Low on-resistance • Ca.
HAT1000-S, LEM
Current Transducer HAT 500..1500 - S
For the electronic measurement of currents: DC, AC, pulsed, mixed, with a galvanic isolation between the primary .
