HAT1096C Datasheet, Mosfet, Renesas Technology

HAT1096C Features

• Mosfet
• Low on-resistance RDS(on) = 225 mΩ typ. (at VGS =
    –4.5 V) www.DataSheet4U.com
• Low drive current.
• 2.5 V gate drive devices.
• High d

PDF File Details

Part number:

HAT1096C

Manufacturer:

Renesas ↗ Technology

File Size:

116.46kb

Download:

📄 Datasheet

Description:

Silicon p-channel power mosfet.

HAT1096C Application

• Applications e, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in

TAGS

HAT1096C

Renesas Technology

📁 Related Datasheet

HAT1090C - Silicon P-Channel Power MOSFET (Renesas Technology)
HAT1090C Silicon P Channel MOS FET Power Switching REJ03G1228-0400 Rev.4.00 Jun. 13, 2005 Features • Low on-resistance RDS(on) = 50 mΩ typ. (at VGS =.

HAT1091C - Silicon P-Channel Power MOSFET (Renesas Technology)
HAT1091C Silicon P Channel MOS FET Power Switching REJ03G1229-0400 Rev.4.00 Jun. 13, 2005 Features • Low on-resistance RDS(on) = 134 mΩ typ. (at VGS .

HAT1093C - Silicon P-Channel MOSFET (Renesas Technology)
HAT1093C Silicon P Channel MOSFET Power Switching Features • Low on-resistance RDS(on) = 41 mΩ typ. (at VGS = –4.5 V) • Low drive current. • 1.8 V ga.

HAT1094C - Silicon P-Channel Power MOSFET (Renesas Technology)
HAT1094C Silicon P Channel MOS FET Power Switching REJ03G1231-0400 Rev.4.00 Feb 28, 2006 Features • Low on-resistance RDS(on) = 67 mΩ typ. (at VGS = .

HAT1095C - Silicon P-Channel Power MOSFET (Renesas Technology)
HAT1095C Silicon P Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 108 mΩ typ. (at VGS = –4.5 V) • Low drive current. • 1.8 V g.

HAT1097R - Silicon P-Channel Power MOSFET (Renesas Technology)
HAT1097R, HAT1097RJ Silicon P Channel Power MOS FET High Speed Power Switching REJ03G0529-0100 Rev.1.00 Feb.15.2005 Features • Low on-resistance • Ca.

HAT1097RJ - Silicon P-Channel Power MOSFET (Renesas Technology)
HAT1097R, HAT1097RJ Silicon P Channel Power MOS FET High Speed Power Switching REJ03G0529-0100 Rev.1.00 Feb.15.2005 Features • Low on-resistance • Ca.

HAT1000-S - Current Transducer (LEM)
Current Transducer HAT 500..1500 - S For the electronic measurement of currents: DC, AC, pulsed, mixed, with a galvanic isolation between the primary .

HAT1000-S - (HAT200-S - HAT1500-S) Current Transducer (LEM)
Current Transducer HAT 200..1500-S For the electronic measurement of currents: DC, AC, pulsed, mixed, with a galvanic isolation between the primary ci.

HAT1016R - Silicon P-Channel Power MOSFET (Hitachi Semiconductor)
HAT1016R Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-471 D (Z) 5th. Edition February 1999 Features • • • • Low on-resistance C.