HAT1097R
Renesas ↗ Technology
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Silicon p-channel power mosfet.
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HAT1097RJ - Silicon P-Channel Power MOSFET
(Renesas Technology)
HAT1097R, HAT1097RJ
Silicon P Channel Power MOS FET High Speed Power Switching
REJ03G0529-0100 Rev.1.00 Feb.15.2005
Features
• Low on-resistance • Ca.
HAT1090C - Silicon P-Channel Power MOSFET
(Renesas Technology)
HAT1090C
Silicon P Channel MOS FET Power Switching
REJ03G1228-0400 Rev.4.00 Jun. 13, 2005
Features
• Low on-resistance RDS(on) = 50 mΩ typ. (at VGS =.
HAT1091C - Silicon P-Channel Power MOSFET
(Renesas Technology)
HAT1091C
Silicon P Channel MOS FET Power Switching
REJ03G1229-0400 Rev.4.00 Jun. 13, 2005
Features
• Low on-resistance RDS(on) = 134 mΩ typ. (at VGS .
HAT1093C - Silicon P-Channel MOSFET
(Renesas Technology)
HAT1093C
Silicon P Channel MOSFET Power Switching
Features
• Low on-resistance RDS(on) = 41 mΩ typ. (at VGS = –4.5 V)
• Low drive current. • 1.8 V ga.
HAT1094C - Silicon P-Channel Power MOSFET
(Renesas Technology)
HAT1094C
Silicon P Channel MOS FET Power Switching
REJ03G1231-0400 Rev.4.00 Feb 28, 2006
Features
• Low on-resistance RDS(on) = 67 mΩ typ. (at VGS = .
HAT1095C - Silicon P-Channel Power MOSFET
(Renesas Technology)
HAT1095C
Silicon P Channel MOS FET Power Switching
Features
• Low on-resistance RDS(on) = 108 mΩ typ. (at VGS = –4.5 V)
• Low drive current. • 1.8 V g.
HAT1096C - Silicon P-Channel Power MOSFET
(Renesas Technology)
HAT1096C
Silicon P Channel MOS FET Power Switching
REJ03G1233-0400 Rev.4.00 Jan 26, 2006
Features
• Low on-resistance RDS(on) = 225 mΩ typ. (at VGS =.
HAT1000-S - Current Transducer
(LEM)
Current Transducer HAT 500..1500 - S
For the electronic measurement of currents: DC, AC, pulsed, mixed, with a galvanic isolation between the primary .
HAT1000-S - (HAT200-S - HAT1500-S) Current Transducer
(LEM)
Current Transducer HAT 200..1500-S
For the electronic measurement of currents: DC, AC, pulsed, mixed, with a galvanic isolation between the primary ci.
HAT1016R - Silicon P-Channel Power MOSFET
(Hitachi Semiconductor)
HAT1016R
Silicon P Channel Power MOS FET High Speed Power Switching
ADE-208-471 D (Z) 5th. Edition February 1999 Features
• • • • Low on-resistance C.