Schottky Barrier Rectifier FEATURES ·Common Catho.
Jilin Sino
HBR10200 - SCHOTTKY BARRIER DIODE
R SCHOTTKY BARRIER DIODE HBR10200 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 10（2×5）A 200 V 175 ℃ 0.75V （@Tj=125℃） z z APPLICATI.
Jilin Sino
HBR10200C - SCHOTTKY BARRIER DIODE
R SCHOTTKY BARRIER DIODE HBR10200 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 10（2×5）A 200 V 175 ℃ 0.75V （@Tj=125℃） z z APPLICATI.
Inchange Semiconductor
HBR10200CT - Schottky Barrier Rectifier
Schottky Barrier Rectifier FEATURES ·Common Cathode Structure ·Low Power Loss/High Efficiency ·High Operating Junction Temperature ·Guarding for Overv.
Inchange Semiconductor
HBR10200 - Schottky Barrier Rectifier
Schottky Barrier Rectifier FEATURES ·Common Cathode Structure ·Low Power Loss/High Efficiency ·High Operating Junction Temperature ·Guarding for Overv.
Jilin Sino
HBR10200CR - SCHOTTKY BARRIER DIODE
R SCHOTTKY BARRIER DIODE HBR10200 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 10（2×5）A 200 V 175 ℃ 0.75V （@Tj=125℃） z z APPLICATI.
Jilin Sino
HBR10200F - SCHOTTKY BARRIER DIODE
R SCHOTTKY BARRIER DIODE HBR10200 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 10（2×5）A 200 V 175 ℃ 0.75V （@Tj=125℃） z z APPLICATI.
Jilin Sino
HBR10200FR - SCHOTTKY BARRIER DIODE
R SCHOTTKY BARRIER DIODE HBR10200 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 10（2×5）A 200 V 175 ℃ 0.75V （@Tj=125℃） z z APPLICATI.
Jilin Sino
HBR10200HF - SCHOTTKY BARRIER DIODE
R SCHOTTKY BARRIER DIODE HBR10200 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 10（2×5）A 200 V 175 ℃ 0.75V （@Tj=125℃） z z APPLICATI.
Jilin Sino
HBR10200HFR - SCHOTTKY BARRIER DIODE
R SCHOTTKY BARRIER DIODE HBR10200 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 10（2×5）A 200 V 175 ℃ 0.75V （@Tj=125℃） z z APPLICATI.
