HBR20200 MAIN CHARACTERISTICS SCHOTTKY BARRIER.
Jilin Sino
HBR20200C - SCHOTTKY BARRIER DIODE
R SCHOTTKY BARRIER DIODE HBR20200 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 20（2×10）A 200 V 175 ℃ 0.75V （@Tj=125℃） z z APPLICAT.
Jilin Sino
HBR20200CR - SCHOTTKY BARRIER DIODE
R SCHOTTKY BARRIER DIODE HBR20200 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 20（2×10）A 200 V 175 ℃ 0.75V （@Tj=125℃） z z APPLICAT.
Inchange Semiconductor
HBR20200CT - Schottky Barrier Rectifier
Schottky Barrier Rectifier FEATURES ·Common Cathode Structure ·Low Power Loss,high Efficiency ·High Operating Junction Temperature ·Guarding for Overv.
Tianjin Micro Electronic
HBR20200 - SCHOTTKY BARRIER DIODE
HBR20200 MAIN CHARACTERISTICS SCHOTTKY BARRIER DIODE IF(AV) VRRM Tj VF(max) 20（2×10）A 200 V 175 ℃ 0.75V （@Tj=125℃） APPLICATIONS High frequ.
Jilin Sino
HBR20200 - SCHOTTKY BARRIER DIODE
R SCHOTTKY BARRIER DIODE HBR20200 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 20（2×10）A 200 V 175 ℃ 0.75V （@Tj=125℃） z z APPLICAT.
Jilin Sino
HBR20200FR - SCHOTTKY BARRIER DIODE
R SCHOTTKY BARRIER DIODE HBR20200 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 20（2×10）A 200 V 175 ℃ 0.75V （@Tj=125℃） z z APPLICAT.
Jilin Sino
HBR20200HFR - SCHOTTKY BARRIER DIODE
R SCHOTTKY BARRIER DIODE HBR20200 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 20（2×10）A 200 V 175 ℃ 0.75V （@Tj=125℃） z z APPLICAT.
Jilin Sino
HBR20200F - SCHOTTKY BARRIER DIODE
R SCHOTTKY BARRIER DIODE HBR20200 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 20（2×10）A 200 V 175 ℃ 0.75V （@Tj=125℃） z z APPLICAT.
Jilin Sino
HBR20200HF - SCHOTTKY BARRIER DIODE
R SCHOTTKY BARRIER DIODE HBR20200 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 20（2×10）A 200 V 175 ℃ 0.75V （@Tj=125℃） z z APPLICAT.
