HD50N06_HU50N06 Nov 2009 HD50N06 / HU50N06 60V N.
HD50N06 - 60V N-Channel MOSFET
HD50N06_HU50N06 Nov 2009 HD50N06 / HU50N06 60V N-Channel MOSFET BVDSS = 60 V RDS(on) = 22 mΩ ID = 50 A FEATURES Originative New Design Superio.PHD50N06LT - N-Channel MOSFET
Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET FEATURES • ’Trench’ technology • Very low on-state resistance • F.PHD50N06LT - N-Channel MOSFET
Isc N-Channel MOSFET Transistor PHD50N06LT ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·1.