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PHD50N06LT N-Channel MOSFET

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Description

Philips Semiconductors Product specification TrenchMOS™ transistor Logic level FET .
N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology.

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Features

* ’Trench’ technology
* Very low on-state resistance
* Fast switching
* Stable off-state characteristics
* High thermal cycling performance
* Low thermal resistance PHP50N06LT, PHB50N06LT, PHD50N06LT SYMBOL d QUICK REFERENCE DATA VDSS = 55 V ID = 50

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