Part number: PHD20N06T
Manufacturer: nexperia (https://www.nexperia.com/)
File Size: 687.47KB
Download: 📄 Datasheet
Description: N-channel TrenchMOS standard level FET
* Low conduction losses due to low on-state resistance
* Suitable for high frequency applications due to fast switching characteristics
1.3 Applications
* D.
only.
1.2 Features and benefits
* Low conduction losses due to low on-state resistance
* Suitable for high fre.
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
1.2 Feat.
Image gallery
TAGS
📁 Related Datasheet
PHD20N06T - N-Channel Transistor
(NXP)
PHD20N06T
N-channel TrenchMOS™ transistor
Rev. 01 — 22 February 2001
M3D300
Product specification
1. Description
N-channel enhancement mode field-effe.
PHD21N06LT - N-Channel MOSFET
(NXP)
Philips Semiconductors
Product specification
N-channel TrenchMOS™ transistor Logic level FET
FEATURES
• ’Trench’ technology • Low on-state resistanc.
PHD22NQ20T - N-channel TrenchMOS standard level FET
(NXP Semiconductors)
www..com
PHD22NQ20T
N-channel TrenchMOS™ standard level FET
Rev. 01 — 08 March 2004
M3D300
Product data
1. Product profile
1.1 Descriptio.
PHD23NQ10T - N-Channel Transistor
(NXP)
Philips Semiconductors
Product specification
N-channel TrenchMOS™ transistor
PHP23NQ10T, PHB23NQ10T PHD23NQ10T
QUICK REFERENCE DATA
d
FEATURES
• ’.
PHD24N03 - Transistor
(NXP)
Philips Semiconductors
Preliminary specification
TrenchMOS transistor Logic level FET
FEATURES
• ’Trench’ technology • Very low on-state resistance.
PHD24N03LT - Transistor
(NXP)
Philips Semiconductors
Preliminary specification
TrenchMOS transistor Logic level FET
FEATURES
• ’Trench’ technology • Very low on-state resistance.
PHD27NQ10T - N-Channel Transistor
(NXP)
Philips Semiconductors
Product specification
N-channel TrenchMOS™ transistor
PHP27NQ10T, PHB27NQ10T PHD27NQ10T
QUICK REFERENCE DATA
d
FEATURES
• ’.
PHD2N50E - Transistor
(NXP)
Philips Semiconductors
Product specification
PowerMOS transistors Avalanche energy rated
FEATURES
• Repetitive Avalanche Rated • Fast switching • St.
PHD2N60 - PowerMOS transistor
(NXP)
Philips Semiconductors
Product specification
PowerMOS transistor
PHD2N60
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transis.
PHD2N60E - Transistor
(NXP)
Philips Semiconductors
Product specification
PowerMOS transistors Avalanche energy rated
FEATURES
• Repetitive Avalanche Rated • Fast switching • St.
