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PHD21N06LT - N-Channel MOSFET

Datasheet Summary

Description

N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology.

d.c.

to d.c.

switched mode power supplies The PHP21N06LT is supplied in the SOT78 (TO220AB) conventional leaded package.

Features

  • ’Trench’ technology.
  • Low on-state resistance.
  • Fast switching.
  • Logic level compatible g PHP21N06LT, PHB21N06LT PHD21N06LT QUICK.

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Datasheet preview – PHD21N06LT

Datasheet Details

Part number PHD21N06LT
Manufacturer NXP
File Size 112.46 KB
Description N-Channel MOSFET
Datasheet download datasheet PHD21N06LT Datasheet
Additional preview pages of the PHD21N06LT datasheet.

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Full PDF Text Transcription

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Philips Semiconductors Product specification N-channel TrenchMOS™ transistor Logic level FET FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • Logic level compatible g PHP21N06LT, PHB21N06LT PHD21N06LT QUICK REFERENCE DATA d SYMBOL VDSS = 55 V ID = 19 A RDS(ON) ≤ 75 mΩ (VGS = 5 V) RDS(ON) ≤ 70 mΩ (VGS = 10 V) s GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. Applications:• d.c. to d.c. converters • switched mode power supplies The PHP21N06LT is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB21N06LT is supplied in the SOT404 (D2PAK) surface mounting package. The PHD21N06LT is supplied in the SOT428 (DPAK) surface mounting package.
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