PHD23NQ10T Datasheet | NXP Semiconductors

Philips Semiconductors Product specification N-channel TrenchMOS™ transistor PHP23NQ10T, PHB23NQ10T PHD23NQ10T QUICK REFERENCE DATA d Features - ’Trench’ technology - Low on-state resistance - Fast switching - Low thermal resistance SYMBOL VDSS = 100 V ID = 23 A g RDS(ON) ≤ 70 mΩ s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. Applications:- d.c. to d.c. converters - switched mode power supplies - T.V. and puter monitor power supplies The PHP23NQ10T is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB23NQ10T is supplied in the SOT404 (D2PAK) surface mounting package. The PHD23NQ10T...