Datasheet Summary
Philips Semiconductors
Preliminary specification
TrenchMOS transistor Logic level FET
Features
- ’Trench’ technology
- Very low on-state resistance
- Fast switching
- Stable off-state characteristics
- High thermal cycling performance
- Low thermal resistance
PHD24N03LT
SYMBOL d
QUICK REFERENCE DATA VDSS = 30 V ID = 24 A g
RDS(ON) ≤ 56 mΩ (VGS = 5 V) RDS(ON) ≤ 50 mΩ (VGS = 10 V) s
GENERAL DESCRIPTION
N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHD24N03LT is supplied in...