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PHD2N50E - Transistor

Datasheet Summary

Description

N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V.

and computer monitor power supplies, d.c.

to d.c.

Features

  • Repetitive Avalanche Rated.
  • Fast switching.
  • Stable off-state characteristics.
  • High thermal cycling performance.
  • Low thermal resistance PHP2N50E, PHB2N50E, PHD2N50E SYMBOL d QUICK.

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Datasheet preview – PHD2N50E

Datasheet Details

Part number PHD2N50E
Manufacturer NXP
File Size 75.27 KB
Description Transistor
Datasheet download datasheet PHD2N50E Datasheet
Additional preview pages of the PHD2N50E datasheet.

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Full PDF Text Transcription

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Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance PHP2N50E, PHB2N50E, PHD2N50E SYMBOL d QUICK REFERENCE DATA VDSS = 500 V g ID = 2 A RDS(ON) ≤ 5 Ω s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHP2N50E is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB2N50E is supplied in the SOT404 surface mounting package.
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