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PHD55N03LT N-Channel MOSFET

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Description

Philips Semiconductors Product specification N-channel TrenchMOS™ transistor Logic level FET .
N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. High freq.

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Features

* ’Trench’ technology
* Very low on-state resistance
* Fast switching
* Low thermal resistance
* Logic level compatible PHP55N03LT, PHB55N03LT PHD55N03LT QUICK REFERENCE DATA d SYMBOL VDSS = 25 V ID = 55 A RDS(ON) ≤ 14 mΩ (VGS = 10 V) RDS(ON) ≤ 18 mΩ (VGS =

Applications

* High frequency computer motherboard d. c. to d. c. converters
* High current switching The PHP55N03LT is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB55N03LT is supplied in the SOT404 (D2PAK) surface mounting package. The PHD55N03LT is supplied in the SOT428 (D

PHD55N03LT Distributors

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