HF-I Datasheet | Specifications & PDF Download

SMD Glass Passivated Bridge Rectifiers ABS05-HF Thru. ABS10-HF Reverse Voltage: 50 to 1000 Volts Forward Current: 1.0 A RoHS Device Halogen Free Feat

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www.DataSheet4U.com PD 2.506 PRELIMINARY HFA50HF20 Ultrafast, Soft Recovery Diode CATHODE HEXFRED Features • • • • • TM VR = 200V V F = 0.96V Qr

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www.DataSheet4U.com VHF 15 Half Controlled Single Phase Rectifier Bridge with Freewheeling Diode IdAVM = 21 A VRRM = 800-1600 V VRSM VDSM V 900 13

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R SCHOTTKY BARRIER DIODE HBR16200 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 16（2×8）A 200 V 175 ℃ 0.75V （@Tj=125℃） z z APPLICATI

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General Purpose Transistor 2SC5658-HF (NPN) RoHS Device Halogen Free Comchip SMD Diode Specialist Features -Low Cob. Mechanical data -Case: SOT-723,

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SMD Schottky Barrier Diode CDBFR0130R-HF Io = 100 mA VR = 30 Volts RoHS Device Halogen Free Features -Low reverse current. -Designed for mounting on s

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GD950HTA75P6HFT STARPOWER SEMICONDUCTOR GD950HTA75P6HFT 750V/950A 6 in one-package IGBT Module IGBT General Description STARPOWER IGBT Power Module

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TOC UHF-MICROWAVE SUPER HYPERABRUPT JUNCTION VARACTOR DIODES DESCRIPTION The KV 1900 series of super hyperabrupt varactor diodes combines low voltage

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www.vishay.com VS-40HFL, VS-70HFL, VS-85HFL Series Vishay Semiconductors Fast Recovery Diodes (Stud Version), 40 A, 70 A, 85 A DO-5 (DO-203AB) PRI

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VHF / UFH Transistor NPN Silicon LESHAN RADIO COMPANY, LTD. z We declare that the material of product compliance with RoHS requirements. Ordering In

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RHFL4913XX25, RHFL4913XX33, RHFL4913XX50 Datasheet Rad-hard positive fixed voltage regulator Features • 2 and 3 A low dropout voltage • Embedded overt

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TOC UHF-MICROWAVE SUPER HYPERABRUPT JUNCTION VARACTOR DIODES DESCRIPTION The KV 1900 series of super hyperabrupt varactor diodes combines low voltage

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RF2513 11 Typical Applications • Single- or Dual-Channel LO Source • FM/FSK Transmitter • Wireless Data Transmitters • 433/868/915MHz ISM Band Systems

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NEC'S 7.5 V UHF BAND NE5511279A RF POWER SILICON LD-MOS FET FEATURES • HIGH OUTPUT POWER: Pout = 40.0 dBm TYP., f = 900 MHz, VDS = 7.5 V, Pout = 40.5

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SEMICONDUCTOR TECHNICAL DATA VHF/UHF WIDE BAND AMPLIFIER APPLICATION. KTC3770T EPITAXIAL PLANAR NPN TRANSISTOR www.DataSheet4U.com E FEATURES Low N

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R SCHOTTKY BARRIER DIODE HBR3060 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 30（2×15） A 60 V 175 ℃ 0.68V （@Tj=125℃） z z APPLICATI

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5000W Transient Voltage Suppressor 5KP-HF Series Breakdown Voltage: 6.8 to 440 Volts Peak Pulse Power: 5000 Watts RoHS Device Halogen Free Features -

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SMD Type P-Channel MOSFET SI2301DS-HF (KI2301DS-HF) ■ Features ● VDS (V) =-20V ● RDS(ON) ＜ 130mΩ (VGS =-4.5V) ● RDS(ON) ＜ 190mΩ (VGS =-2.5V) ● Pb−Fr

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FEATURES „ 8, 10 and 12-Bit resolutions „ Settling times to 25ns „ ±20ppm/°C max. gain tempco „ Unipolar or bipolar operation „ Current output „ Inter

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SMD Zener Diode CZRB5338B-HF Thru. CZRB5388B-HF Voltage: 5.1V to 200V Power: 5 W RoHS Device Halogen Free Features - Glass passivated chip - Low leak

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