HF10N60 Datasheet | Specifications & PDF Download

HF10N60 N-Channel MOSFET Features ■ ■ ■ ■ ■ RDS(on) (Max 0.85 Ω )@VGS=10V Gate Charge (Typical 28nC) Improved dv/dt Capability, High Ruggedness 100%

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MHF10N60CT 600V Silicon N-Channel Power MOSFET ■ Features • Fast switching. • ESD improved capability. • Low gate charge. • Low reverse transfer capa

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