HF10N60 Datasheet, Mosfet, ETC

HF10N60 Features

• Mosfet
• RDS(on) (Max 0.85 Ω )@VGS=10V Gate Charge (Typical 28nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junc

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Part number:

HF10N60

Manufacturer:

ETC

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265.12kb

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📄 Datasheet

Description:

N-channel mosfet. This Power MOSFET is produced using Wisdom ’s advanced planar stripe, DMOS technology. This latest technology has been especially des

TAGS

HF10N60

ETC

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