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HF10N60 N-Channel MOSFET

HF10N60 Description

HF10N60 N-Channel MOSFET .
This Power MOSFET is produced using Wisdom ’s advanced planar stripe, DMOS technology.

HF10N60 Features

* RDS(on) (Max 0.85 Ω )@VGS=10V Gate Charge (Typical 28nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C) Symbol
* 2. Drain ◀ 1. Gate ▲

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Datasheet Details

Part number
HF10N60
Manufacturer
ETC
File Size
265.12 KB
Datasheet
HF10N60-ETC.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET ETC
ETC HF10N60-like datasheet