Part number:
HF10-12S
Manufacturer:
Advanced Semiconductor
File Size:
17.74 KB
Description:
Npn silicon rf power transistor.
* PG = 20 dB min. at 10 W/30 MHz
* IMD3 = -30 dBc max. at 10 W (PEP)
* Omnigold™ Metalization System B C E ØC E B H I J D MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ T STG θ JC O O #8-32 UNC-2A F E G 4.5 A 36 V 18 V 4.0 V 80 W @ TC = 25 C -65 C to +200 C -65 C to +150
HF10-12S
Advanced Semiconductor
17.74 KB
Npn silicon rf power transistor.
📁 Related Datasheet
HF10-12F NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)
HF100-12 NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)
HF100-28 NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)
HF1008 Unshielded Surface Mount Inductors (Delevan)
HF1008R Unshielded Surface Mount Inductors (Delevan)
HF102F MINIATURE HIGH POWER RELAY (Hongfa Technology)
HF105F-1 MINIATURE HIGH POWER RELAY (Hongfa Technology)
HF105F-2 MINIATURE HIGH POWER RELAY (Hongfa Technology)
HF105F-4 MINIATURE HIGH POWER RELAY (Hongfa Technology)
HF10FF MINIATURE HIGH POWER RELAY (Hongfa Technology)