Datasheet4U Logo Datasheet4U.com

HF125-28

NPN SILICON RF POWER TRANSISTOR

HF125-28 Features

* PG = 15 dB min. at 100 W/30 MHz

* IMD3 = -30 dBc max. at 100 W (PEP)

* Omnigold™ Metalization System C B E C Ø.125 NOM. B D G F E E H MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ T STG θ JC 20 A 65 V 36 V 4.0 V 270 W @ TC = 25 OC -65 OC to +200 OC -65 C to +150 C 0.65

HF125-28 Datasheet (18.49 KB)

Preview of HF125-28 PDF

Datasheet Details

Part number:

HF125-28

Manufacturer:

Advanced Semiconductor

File Size:

18.49 KB

Description:

Npn silicon rf power transistor.

📁 Related Datasheet

HF1206J150R-10 Ferrite EMI Chip Beads (Laird)

HF1206J150R-10 Ferrite EMI Chip Beads (Laird)

HF12FF SUBMINIATURE HIGH OPWER RELAY (Hongfa Technology)

HF10-12F NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)

HF10-12S NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)

HF100-12 NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)

HF100-28 NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)

HF1008 Unshielded Surface Mount Inductors (Delevan)

HF1008R Unshielded Surface Mount Inductors (Delevan)

HF102F MINIATURE HIGH POWER RELAY (Hongfa Technology)

TAGS

HF125-28 NPN SILICON POWER TRANSISTOR Advanced Semiconductor

HF125-28 Distributor