HF12FF
Hongfa Technology
46.78kb
Subminiature high opwer relay.
TAGS
📁 Related Datasheet
HF1206J150R-10 - Ferrite EMI Chip Beads
(Laird)
.
HF1206J150R-10 - Ferrite EMI Chip Beads
(Laird)
Ferrite EMI Chip Beads
Features:
• Up to 10 Amps (I MAX) continuous operating capability • Low DCR • Vibration Resistant • Rugged monolithic construct.
HF125-28 - NPN SILICON RF POWER TRANSISTOR
(Advanced Semiconductor)
HF125-28
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI HF125-28 is Designed for
PACKAGE STYLE .500 4L FLG
.112x45° A FULL R L
FEATURES:
• PG.
HF10-12F - NPN SILICON RF POWER TRANSISTOR
(Advanced Semiconductor)
HF10-12F
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI HF10-12F is Designed for
PACKAGE STYLE .380 4L FLG
B .112 x 45° A
FEATURES:
• PG = 20.
HF10-12S - NPN SILICON RF POWER TRANSISTOR
(Advanced Semiconductor)
HF10-12S
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI HF10-12S is Designed for
PACKAGE STYLE .380 4L STUD
.112x45° A
FEATURES:
• PG = 20 dB.
HF100-12 - NPN SILICON RF POWER TRANSISTOR
(Advanced Semiconductor)
HF100-12
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI HF100-12 is Designed for
PACKAGE STYLE .500 4L FLG
.112x45° A FULL R Ø.125 NOM. L
FEA.
HF100-28 - NPN SILICON RF POWER TRANSISTOR
(Advanced Semiconductor)
HF100-28
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI HF100-28 is a class A silicon NPN planar transistor, designed for SSB munications. D.
HF1008 - Unshielded Surface Mount Inductors
(Delevan)
Inductors RF
TESTSFRCMRFUDAEMRMCXQRIAIUNRMEXEIEQUMNINSMMTUMCIUSMR(IYNMTOAA((IHMMTM(NmMIUHHNCASMzzGE)))) INDDUACSTOTHALNNEUCRMEABN(EnCRHE*)
SERIES
HF.
HF1008R - Unshielded Surface Mount Inductors
(Delevan)
Inductors RF
TESTSFRCMRFUDAEMRMCXQRIAIUNRMEXEIEQUMNINSMMTUMCIUSMR(IYNMTOAA((IHMMTM(NmMIUHHNCASMzzGE)))) INDDUACSTOTHALNNEUCRMEABN(EnCRHE*)
SERIES
HF.
HF102F - MINIATURE HIGH POWER RELAY
(Hongfa Technology)
86.-/6
;9<91AB?5 8978 >=D5? ?5:1F
w=@9 ~Ccovfhijfl 4C5
w=@9 ~Ccoieegifig
w=@9 ~Ccot,tfheegenmfkj
6JGTURJS
V icj?1 8=9@97HF=7 GHF9B;H< ]69HK99B 7C=@.
