HF10-12F Datasheet, Transistor, Advanced Semiconductor

✔ HF10-12F Features

PG = 20 dB min. at 10 W/30 MHz
IMD3 = -30 dBc max. at 10 W (PEP)
Omnigold™ Metalization System F E B C D E C E Ø.125 NOM. FULL R J .125 MAXIMUM RATINGS IC VCBO

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HF10-12F

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Advanced Semiconductor

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📄 Datasheet

Description:

Npn silicon rf power transistor. The ASI HF10-12F is Designed for PACKAGE STYLE .380 4L FLG B .112 x 45° A FEATURES: * PG = 20 dB min. at 10 W/30 MHz * IMD3 = -30

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HF10-12F NPN SILICON POWER TRANSISTOR Advanced Semiconductor