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HF10-12F Datasheet - Advanced Semiconductor

NPN SILICON RF POWER TRANSISTOR

HF10-12F Features

* PG = 20 dB min. at 10 W/30 MHz

* IMD3 = -30 dBc max. at 10 W (PEP)

* Omnigold™ Metalization System F E B C D E C E Ø.125 NOM. FULL R J .125 MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ T STG θ JC 4.5 A 36 V 18 V 4.0 V 80 W @ TC = 25 C -65 OC to +200 OC -65 C to +150 C 2.

HF10-12F Datasheet (18.31 KB)

Preview of HF10-12F PDF

Datasheet Details

Part number:

HF10-12F

Manufacturer:

Advanced Semiconductor

File Size:

18.31 KB

Description:

Npn silicon rf power transistor.

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TAGS

HF10-12F NPN SILICON POWER TRANSISTOR Advanced Semiconductor

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