HF100-28 Datasheet - Advanced Semiconductor

HF100-28 NPN SILICON RF POWER TRANSISTOR

HF100-28 Features

* PG = 15 dB min. at 100 W/30 MHz

* High linear power output

* IMD3 = -30 dBc max. at 100 W (PEP)

* Omnigold™ Metalization System

* 28 V CE operation E FULL R C Ø.125 NOM. C B B D G F E E H I J K MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θJC 20

Datasheet Details

HF100-28

Advanced Semiconductor

73.93 KB

Npn silicon rf power transistor.

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