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HFP630 N-Channel Enhancement Mode Field Effect Transistor

Tstg Tj VD S S VDGR VG S ID PD Ta=25 (RGS=1M ) Tc.

N-Channel Enhancement Mode Field Effect Transistor

Tstg Tj VD S S VDGR VG S ID PD Ta=25 (RGS=1M ) Tc=25 T c =25 Ta=25 N-Channel Enhancement Mode Field Effect Transistor HFP630 TO-220 55~150 55~150

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200V N-Channel MOSFET

HFP630A Jan 2016 HFP630A 200V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technolo

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200V N-Channel MOSFET

HFP630 July 2005 HFP630 200V N-Channel MOSFET BVDSS = 200 V RDS(on) typ = 0.34 ȍ ID = 9 A FEATURES Originative New Design Superior Avalanche R

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