HI-8150 Datasheet | Specifications & PDF Download

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February 2017 HI-8050/51, HI-8150/51 CMOS High Voltage Display Driver GENERAL DESCRIPTION The HI-8050, HI-8051, HI-8150 and HI-8151 are CMOS integra

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wwCw.ODaNtaTShReUReOtSE4LUBA.LcLToEmToREFAKWSSITTINHEGTMLHIEEI-RICNNHTEIEPTRRTFLA815C0(ME) 1 Features: RTL8150L(M) .com RTL8150L supports 48 pins LQ

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HYNIX SEMICONDUCTOR 8-BIT SINGLE-CHIP MICROCONTROLLERS GMS81508B GMS81516B GMS81524B GMS82512 GMS82516 GMS81524 User’s Manual (Ver. 2.0) Revision

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ABOV SEMICONDUCTOR 8-BIT SINGLE-CHIP MICROCONTROLLERS GMS81508B/16B/24B GMS82512/16/24 User’s Manual (Ver. 2.20) REVISION HISTORY VERSION 2.20 (Apr

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ITEM Multilayer Chip Varistor Page 1 Data Sheet - ITEM : Multilayer Chip Varistor - CONDITION : 1. 2. 3. 4. ITEM Multilayer Chip Varistor Page

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DATA SHEET Part No. Package Code No. AN8150FB QFP044-P-1010F www.DataSheet4U.com Publication date: February 2008 SDJ00021AEB 1 AN8150FB Contents

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wwCw.ODaNtaTShReUReOtSE4LUBA.LcLToEmToREFAKWSSITTINHEGTMLHIEEI-RICNNHTEIEPTRRTFLA815C0(ME) 1 Features: RTL8150L(M) .com RTL8150L supports 48 pins LQ

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www.DataSheet4U.com HYUNDAI MicroElectronics GMS81504 GMS81504 CMOS SINGLE-CHIP 8-BIT MICROCONTROLLER OVERVIEW Description The GMS81504 is a high-p

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HIGH VOLTAGE SCHOTTKY RECTIFIER SDB8150PH Schottky Barrier Rectifier Features  Low forward voltage drop  Low power loss and High efficiency  L

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w e e h REALTEK SINGLE-CHIP S a t a USB To FAST ETHERNET D . w CONTROLLER WITH MII INTERFACE w U 4 t m o .c RTL8150(M) RTL8150L(M) 1 Features: R

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ITEM Multilayer Chip Varistor Page 1 Data Sheet - ITEM : Multilayer Chip Varistor - CONDITION : 1. 2. 3. 4. ITEM Multilayer Chip Varistor Page

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M78xx05 Series WIDE INPUT NON-ISOLATED SWITCHING REGULATOR VERY LOW PROFILE SIP-3 PACKAGE REGULATED SINGLE OUTPUT FEATURES ● Efficiency Up To 96% ● N

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SPECIFICATION FOR APPROVAL REF : 20080805-B PROD. NAME PAGE: 1 ABC'S DWG NO. ABC'S ITEM NO. SU1028□□□□F□-□□□ SHIELDED SMD POWER INDUCTOR Ⅰ﹒CONFIGURA

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PTFA081501E PTFA081501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 864 – 900 MHz Description The PTFA081501E and PTFA081501F are thermally-enh

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PXFE181507FC Thermally-Enhanced High Power RF LDMOS FET 175 W, 28 V, 1805 – 1880 MHz Description The PXFE181507FC is a 175-watt LDMOS FET intended f

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® WON-TOP ELECTRONICS SK8150 – SK8200 8.0A HIGH VOLTAGE SURFACE MOUNT SCHOTTKY BARRIER DIODE Pb Features  Low Forward Voltage  Epitaxial Constru

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PTFA081501E PTFA081501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 864 – 900 MHz Description The PTFA081501E and PTFA081501F are thermally-enh

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