PTFA081501E Datasheet - Infineon

PTFA081501E, Thermally-Enhanced High Power RF LDMOS FETs

PTFA081501E PTFA081501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 864 * 900 MHz .
The PTFA081501E and PTFA081501F are thermally-enhanced, 150-watt, internally matched GOLDMOS® FETs intended for ultralinear applications.

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Datasheet Details

Part number:

PTFA081501E

Manufacturer:

Infineon ↗

File Size:

278.83 KB

Description:

Thermally-Enhanced High Power RF LDMOS FETs

Features

* Adjacent Channel Power Ratio (dBc) Thermally-enhanced packages, Pb-free and RoHS-compliant Broadband internal matching Typical CDMA2000 performance at 900 MHz, 28 V - Average output power = 35 W - Linear Gain = 18 dB - Efficiency = 34% - Adjacent channel power =

Applications

* They are characaterized for CDMA and CDMA2000 operation from 864 to 900 MHz. Thermally-enhanced packages provide the coolest operation available. Full gold metallization ensures excellent device lifetime and reliability. PTFA081501E Package H-30248-2 PTFA081501F Package H-31248-2 IS-95 CDMA Perfo

PTFA081501E Distributors

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PTFA081501E Thermally-Enhanced High Power LDMOS FETs Infineon

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