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PTFA081501E Datasheet - Infineon

Thermally-Enhanced High Power RF LDMOS FETs

PTFA081501E Features

* Adjacent Channel Power Ratio (dBc) Thermally-enhanced packages, Pb-free and RoHS-compliant Broadband internal matching Typical CDMA2000 performance at 900 MHz, 28 V - Average output power = 35 W - Linear Gain = 18 dB - Efficiency = 34% - Adjacent channel power =

PTFA081501E General Description

The PTFA081501E and PTFA081501F are thermally-enhanced, 150-watt, internally matched GOLDMOS® FETs intended for ultralinear applications. They are characaterized for CDMA and CDMA2000 operation from 864 to 900 MHz. Thermally-enhanced packages provide the coolest operation available. Full gold metall.

PTFA081501E Datasheet (278.83 KB)

Preview of PTFA081501E PDF

Datasheet Details

Part number:

PTFA081501E

Manufacturer:

Infineon ↗

File Size:

278.83 KB

Description:

Thermally-enhanced high power rf ldmos fets.

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PTFA081501E Thermally-Enhanced High Power LDMOS FETs Infineon

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