PTFA081501E

Thermally-Enhanced High Power RF LDMOS FETs

Infineon

Image	Manufacturer	Part Number	B2B mpn	Description	Distributor	In Stock	Quantity	Price	Buy Now
	Infineon Technologies AG	PTFA081501E	PTFA081501E-V1	RF MOSFET LDMOS 28V H-30248-2	DigiKey	0	0	$0	🛒 Buy Now

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Datasheet Details

Part number:

PTFA081501E

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Infineon ↗

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Description:

Thermally-enhanced high power rf ldmos fets.
PTFA081501E PTFA081501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 864 * 900 MHz Description.
The PTFA081501E and PTFA081501F are thermally-enhanced, 150-watt, internally matched GOLDMOS® FETs i.

✔ PTFA081501E Features

Adjacent Channel Power Ratio (dBc) Thermally-enhanced packages, Pb-free and RoHS-compliant Broadband internal matching Typical CDMA2000 performance at 900 MHz, 28

✔ PTFA081501E Application

They are characaterized for CDMA and CDMA2000 operation from 864 to 900 MHz. Thermally-enhanced packages pr

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PTFA081501E Thermally-Enhanced High Power LDMOS FETs Infineon