PTFA082201F

Thermally-Enhanced High Power RF LDMOS FETs

Infineon

Image	Manufacturer	P/N	B2B MPN	Description	Distributor	Stock	Quantity	Price	Buy Now
	Infineon Technologies AG	PTFA082201F	PTFA082201F-V1	RF MOSFET LDMOS 30V H-37260-2	DigiKey	0	40 units	$126.88	🛒 Buy Now

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Datasheet Details

Part number:

PTFA082201F

Manufacturer:

Infineon ↗

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372.95 KB

Description:

Thermally-enhanced high power rf ldmos fets.
PTFA082201E PTFA082201F Confidential, Limited Internal Distribution Thermally-Enhanced High Power R.
The PTFA082201E and PTFA082201F are 220-watt LDMOS FETs designed for CDMA and WCDMA power amplifier .

✔ PTFA082201F Features

include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices pro

✔ PTFA082201F Application

in the 869 to 894 MHz band. Features include input and output matching, and thermally-enhanced packages with

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PTFA082201F Thermally-Enhanced High Power LDMOS FETs Infineon

Datasheet Details

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Description:

✔ PTFA082201F Features

✔ PTFA082201F Application

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