PTFA080551E - Thermally-Enhanced High Power RF LDMOS FETs

Infineon

Datasheet Details

The PTFA080551E and PTFA080551F are 55-watt LDMOS FETs designed for EDGE and CDMA power amplifier applications in the 869 to 960 MHz band.

include input matching and thermallyenhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA080551E Package H-36265-2 PTFA080551F Package H-37265-2 Three-carrier CDMA2000 Performance VDD = 28 V, IDQ = 450 mA, ƒ = 960 MHz Features.
-35 -40 -45 Broadband internal matching Typical EDGE performance - Average output power = 26 W - Gain = 18 dB - Effi.

📁 Related Datasheet

PTFA - Plug Type Fixed Attenuator (OPLINK)
PTFA142401EL - Thermally-Enhanced High Power RF LDMOS FET (Infineon Technologies)
PTFA142401FL - Thermally-Enhanced High Power RF LDMOS FET (Infineon Technologies)
PTFA180701E - Thermally-Enhanced High Power RF LDMOS FET (Infineon Technologies)
PTFA180701F - Thermally-Enhanced High Power RF LDMOS FET (Infineon Technologies)
PTFA181001E - Thermally-Enhanced High Power RF LDMOS FET (Infineon Technologies)
PTFA181001F - Thermally-Enhanced High Power RF LDMOS FET (Infineon Technologies)
PTFA181001GL - Thermally-Enhanced High Power RF LDMOS FET (Infineon Technologies)

📌 All Tags

Infineon PTFA080551E-like datasheet

PTFA080551E Stock/Price