* include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA082201E Package H-36260-2 PTFA082201F Package H-37260-2 2-Carri
PTFA082201E Datasheet (372.95 KB)
PTFA082201E
372.95 KB
Thermally-enhanced high power rf ldmos fets.
PTFA082201E PTFA082201F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 869 894 MHz Descript.
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