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PTFA082201E Datasheet - Infineon

PTFA082201E, Thermally-Enhanced High Power RF LDMOS FETs

PTFA082201E PTFA082201F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 869 * 894 MHz Descript.
The PTFA082201E and PTFA082201F are 220-watt LDMOS FETs designed for CDMA and WCDMA power amplifier applications in the 869 to 894 MHz band.
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PTFA082201E_Infineon.pdf

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Datasheet Details

Part number:

PTFA082201E

Manufacturer:

Infineon ↗

File Size:

372.95 KB

Description:

Thermally-Enhanced High Power RF LDMOS FETs

Features

* include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA082201E Package H-36260-2 PTFA082201F Package H-37260-2 2-Carri

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