Hongfa Technology
HM810 - Ultra-compact high-power electromagnetic relay
PCB
♦
HM810
♦ UL &CUR、TUVCQC ♦ 20A ♦ ♦ PCB ♦ ()
1A,24VDC
1H 1Z
100mΩ AgSnO2 AgNi
()
20A 125VAC 17A 277VAC
277VAC
N.O. 16A/250VAC N.C.
(29 views)
HeTai
42BYGHM810 - HYBRID STEPPING MOTOR
42BYGHM
HYBRID STEPPING MOTOR
General Specifications
Step Accuracy Temperature Rise Insulation Resistance Ambient Temperature Dielectric Strength M
(9 views)
Toshiba
THM81000L-10 - DRAM
TOSHIBA MOS MEMORY PRODUCT
1,048,576 WORDS X 8 BIT DYNAMIC RAM MODULE
THM81 000S/L-1 0/12
JOESCRIPTION/
The THM8l000S/L is a 1,048,576 words by 8 b
(8 views)
Toshiba
THM81000S-12 - DRAM
TOSHIBA MOS MEMORY PRODUCT
1,048,576 WORDS X 8 BIT DYNAMIC RAM MODULE
THM81 000S/L-1 0/12
JOESCRIPTION/
The THM8l000S/L is a 1,048,576 words by 8 b
(8 views)
H&M Semiconductor
HM810 - Low-power microprocessor reset circuit power supply monitoring
+0803/809/810
HM803/809/810 。, ,。
,;
, 140 。HM803 ,HM809/810 CMOS 。HM803 , VCC VCC 。 HM803/809 ,HM810 。
。, 1.15V 。
:±2.
(8 views)
Toshiba
THM81000S-10 - DRAM
TOSHIBA MOS MEMORY PRODUCT
1,048,576 WORDS X 8 BIT DYNAMIC RAM MODULE
THM81 000S/L-1 0/12
JOESCRIPTION/
The THM8l000S/L is a 1,048,576 words by 8 b
(6 views)
Toshiba
THM81000L-12 - DRAM
TOSHIBA MOS MEMORY PRODUCT
1,048,576 WORDS X 8 BIT DYNAMIC RAM MODULE
THM81 000S/L-1 0/12
JOESCRIPTION/
The THM8l000S/L is a 1,048,576 words by 8 b
(5 views)