HRL Datasheet | Specifications & PDF Download

HRLO120N10H Jan 2016 HRLO120N10H 100V N-Channel Trench MOSFET Features  High Speed Power Switching, Logic Level  Enhanced Body diode dv/dt capabi

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H10-C321HRLBYA/5M 1、/ Features  / Package ( L/W/H ) : 3.0x1.0x2.1mm  / Color: 、/ Ultra Bright Red / Blue Bi-Color  / Lens: / Water Clear Arcs Mold

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NCR-18650B LITHIUM-ION / NNP + HRL TECHNOLOGy A perfect combination of high energy density (e.g. NNP technology), safety (e.g. PSS and HRL technolog

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HRLD1B8N10K_HRLU1B8N10K HRLD1B8N10K / HRLU1B8N10K 100V N-Channel Trench MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technolo

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HRLP120N10H Dec 2016 HRLP120N10H 100V N-Channel Trench MOSFET Features  High Speed Power Switching, Logic Level  Enhanced Body diode dv/dt capabi

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NCR-18650F LITHIUM-ION / NNP + HRL TECHNOLOGy Panasonic is one of the leading Lithium-Ion battery manufacturers in the world. A perfect combination

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NCR-18650E LITHIUM-ION / NNP + HRL TECHNOLOGy Panasonic is one of the leading Lithium-Ion battery manufacturers in the world. A perfect combinatio

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LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon FEATURE ƽHigh current capacity in compact package. IC =1.5 A. ƽEpitaxial planar ty

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HRLE320N03K Jan 2016 HRLE320N03K 30V N-Channel Trench MOSFET Features ‰ Low Dense Cell Design ‰ Reliable and Rugged ‰ Advanced Trench Process Techno

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LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon FEATURE ƽHigh current capacity in compact package. IC =1.5 A. ƽEpitaxial planar ty

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LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon FEATURE ƽHigh current capacity in compact package. ƽEpitaxial planar type. ƽPNP co

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HRLD370N10K_HRLU370N10K HRLD370N10K / HRLU370N10K 100V N-Channel Trench MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technolo

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HRLP40N04K HRLP40N04K 40V N-Channel Trench MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Excellent Switching Char

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H6-C211HRLB/5M 1、/ Features  / Package ( L/W/H ) : 2.0x0.6x1.1mm  / Color: 、/ Ultra Bright R/B Color  / Lens: / Water Clear Flat Mold  EIA/ EIA ST

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H5-C108HRLB/5M 1、/ Features  / Package ( L/W/H ) : 1.6x0.5x0.8mm  / Color: 、/ Ultra Bright R/B Color  / Lens: / Water Clear Flat Mold  EIA/ EIA ST

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HRLS43N06H April 2016 HRLS43N06H 60V N-Channel Trench MOSFET Features ‰ High Speed Power Switching, Logic Level ‰ Enhanced Body diode dv/dt capabil

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www.DataSheet4U.com HRL0103C Silicon Schottky Barrier Diode for Rectifying REJ03G0367-0200 Rev.2.00 Mar 05, 2007 Features • Low reverse voltage drop

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LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon FEATURE ƽHigh current capacity in compact package. ƽEpitaxial planar type. ƽPNP co

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HRLD125N06K_HRLU125N06K HRLD125N06K / HRLU125N06K 60V N-Channel Trench MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technolog

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