HRL0103C Datasheet, Diode, Renesas Technology

PDF File Details

Part number:

HRL0103C

Manufacturer:

Renesas ↗ Technology

File Size:

100.15kb

Download:

📄 Datasheet

Description:

Silicon schottky barrier diode.

TAGS

HRL0103C

Renesas Technology

📁 Related Datasheet

HRLD125N06K - N-Channel MOSFET (SemiHow)
HRLD125N06K_HRLU125N06K HRLD125N06K / HRLU125N06K 60V N-Channel Trench MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technolog.

HRLD150N10K - N-Channel MOSFET (SemiHow)
HRLD150N10K_HRLU150N10K HRLD150N10K / HRLU150N10K 100V N-Channel Trench MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technolo.

HRLD1B8N10K - N-Channel MOSFET (SemiHow)
HRLD1B8N10K_HRLU1B8N10K HRLD1B8N10K / HRLU1B8N10K 100V N-Channel Trench MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technolo.

HRLD370N10K - N-Channel MOSFET (SemiHow)
HRLD370N10K_HRLU370N10K HRLD370N10K / HRLU370N10K 100V N-Channel Trench MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technolo.

HRLD55N03K - N-Channel MOSFET (SemiHow)
HRLD55N03K_HRLU55N03K HRLD55N03K / HRLU55N03K 30V N-Channel Trench MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technology  .

HRLE320N03K - N-Channel MOSFET (SemiHow)
HRLE320N03K Jan 2016 HRLE320N03K 30V N-Channel Trench MOSFET Features ‰ Low Dense Cell Design ‰ Reliable and Rugged ‰ Advanced Trench Process Techno.

HRLE550P03K - P-Channel MOSFET (SemiHow)
HRLE550P03K HRLE550P03K -30V P-Channel MOSFET FEATURES ‰ Super High Dense Cell Design ‰ Reliable and Rugged ‰ Lower RDS(ON) : 55 Pȍ (Max.) @VGS=-10V .

HRLF120N10H - N-Channel MOSFET (SemiHow)
HRLF120N10H Jan 2016 HRLF120N10H 100V N-Channel Trench MOSFET Features  High Speed Power Switching, Logic Level  Enhanced Body diode dv/dt capabi.

HRLF125N06K - N-Channel MOSFET (SemiHow)
HRLF125N06K HRLF125N06K 60V N-Channel Trench MOSFET FEATURES  BVDSS = 60 V  ID = 70 A  Unrivalled Gate Charge : 50 nC (Typ.)  Lower RDS(ON) : 10 .

HRLF150N10K - N-Channel MOSFET (SemiHow)
HRLF150N10K Jan 2016 HRLF150N10K 100V N-Channel Trench MOSFET FEATURES ‰ BVDSS = 100 V ‰ ID = 50 A ‰ Unrivalled Gate Charge : 80 nC (Typ.) ‰ Lower R.