HRLD125N06K - N-Channel MOSFET

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 Originative New Design  Superior Avalanche Rugged Technology  Excellent Switching Characteristics  Unrivalled Gate Charge : 50 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 10 mΩ (Typ. ) @VGS=10V  Lower RDS(ON) : 12 mΩ (Typ. ) @VGS=4.5V  100% Avalanche Tested December 2014 BVDSS = 60 V RDS(on) typ = 10 mΩ ID = 70 A D-PAK I-PAK 2 1 3 HRD125N06K 1 2 3 HRU125N06K 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value.

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Published: Mar 26, 2016 |