HRLD1B8N10K Datasheet, Mosfet, SemiHow

HRLD1B8N10K Features

  • Mosfet ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 11.5 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RD

PDF File Details

Part number:

HRLD1B8N10K

Manufacturer:

SemiHow

File Size:

329.86kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

Datasheet Preview: HRLD1B8N10K 📥 Download PDF (329.86kb)
Page 2 of HRLD1B8N10K Page 3 of HRLD1B8N10K

TAGS

HRLD1B8N10K
N-Channel
MOSFET
SemiHow

📁 Related Datasheet

HRLD125N06K - N-Channel MOSFET (SemiHow)
HRLD125N06K_HRLU125N06K HRLD125N06K / HRLU125N06K 60V N-Channel Trench MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technolog.

HRLD150N10K - N-Channel MOSFET (SemiHow)
HRLD150N10K_HRLU150N10K HRLD150N10K / HRLU150N10K 100V N-Channel Trench MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technolo.

HRLD370N10K - N-Channel MOSFET (SemiHow)
HRLD370N10K_HRLU370N10K HRLD370N10K / HRLU370N10K 100V N-Channel Trench MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technolo.

HRLD55N03K - N-Channel MOSFET (SemiHow)
HRLD55N03K_HRLU55N03K HRLD55N03K / HRLU55N03K 30V N-Channel Trench MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technology  .

HRL0103C - Silicon Schottky Barrier Diode (Renesas Technology)
.. HRL0103C Silicon Schottky Barrier Diode for Rectifying REJ03G0367-0200 Rev.2.00 Mar 05, 2007 Features • Low reverse voltage drop.

HRLE320N03K - N-Channel MOSFET (SemiHow)
HRLE320N03K Jan 2016 HRLE320N03K 30V N-Channel Trench MOSFET Features ‰ Low Dense Cell Design ‰ Reliable and Rugged ‰ Advanced Trench Process Techno.

HRLE550P03K - P-Channel MOSFET (SemiHow)
HRLE550P03K HRLE550P03K -30V P-Channel MOSFET FEATURES ‰ Super High Dense Cell Design ‰ Reliable and Rugged ‰ Lower RDS(ON) : 55 Pȍ (Max.) @VGS=-10V .

HRLF120N10H - N-Channel MOSFET (SemiHow)
HRLF120N10H Jan 2016 HRLF120N10H 100V N-Channel Trench MOSFET Features  High Speed Power Switching, Logic Level  Enhanced Body diode dv/dt capabi.

HRLF125N06K - N-Channel MOSFET (SemiHow)
HRLF125N06K HRLF125N06K 60V N-Channel Trench MOSFET FEATURES  BVDSS = 60 V  ID = 70 A  Unrivalled Gate Charge : 50 nC (Typ.)  Lower RDS(ON) : 10 .

HRLF150N10K - N-Channel MOSFET (SemiHow)
HRLF150N10K Jan 2016 HRLF150N10K 100V N-Channel Trench MOSFET FEATURES ‰ BVDSS = 100 V ‰ ID = 50 A ‰ Unrivalled Gate Charge : 80 nC (Typ.) ‰ Lower R.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts