HRLD1B8N10K - N-Channel MOSFET

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Datasheet Details

Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 11.5 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 140 Pȍ (Typ. ) @VGS=10V Lower RDS(ON) : 185 Pȍ (Typ. ) @VGS=4.5V Built-in ESD Diode 100% Avalanche Tested Jan 2015 BVDSS = 100 V RDS(on) typ = Pȍ ID = 2.7 A D-PAK I-PAK 2 1 1 32 3 HRLD1B8N10K HRLU1B8N10K 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol.

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Published: Mar 26, 2016 |