HY-53 Datasheet | Specifications & PDF Download

HYG053N10NS1P/B Feature  100V/120A RDS(ON)=4.8 mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Halogen-Free Devices Available (RoH

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_ _ _ _ _ _ _jl__B_T153_ FAST TURN-OFF THYRISTOR Glass-passivated, eutectically bonded, fast turn-off thyristor in a TO-220AB envelope, intended for

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www.DataSheet4U.com Data Sheet No. PD 96946A IRIS-G6353 Features • Oscillator is provided on the monolithic control with adopting On-ChipTrimming te

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isc Thyristors BT153 APPLICATIONS ·It is suitable to fit all modes of control found in applications such as overvoltage crowbar protection,motor con

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HYG053N10NS1P/B Feature  100V/120A RDS(ON)=4.8 mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Halogen-Free Devices Available (RoH

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www.DataSheet4U.com Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.

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GLASS PASSIVATED RECTIFIERS FEATURES ● Low cost ● Diffused junction ● Low forward voltage drop ● Low reverse leakage current ● High current capability

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N-Channel Enhancement Mode MOSFET HYG053N10NS1C2 Feature HYG053N10NS1C2 Pin Description  100V/95A RDS(ON)=4.6 mΩ(typ.)@VGS = 10V DDDD DDDD  10

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GLASS PASSIVATED RECTIFIERS FEATURES ● Low cost ● Diffused junction ● Low forward voltage drop ● Low reverse leakage current ● High current capability

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www.DataSheet4U.com

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HYG053N10NS1D/U/V N-Channel Enhancement Mode MOSFET HYG053N10NS1D/U/V Feature HYG053N10NS1D/U/V Pin Description  100V/95A RDS(ON)=5.2mΩ(typ.)@VG

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HYG053N10NS1D/U/V N-Channel Enhancement Mode MOSFET HYG053N10NS1D/U/V Feature HYG053N10NS1D/U/V Pin Description  100V/95A RDS(ON)=5.2mΩ(typ.)@VG

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