HY-53 Datasheet | Specifications & PDF Download

HYG053N10NS1P/B Feature  100V/120A RDS(ON)=4.8 mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Halogen-Free Devices Available (RoH

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_ _ _ _ _ _ _jl__B_T153_ FAST TURN-OFF THYRISTOR Glass-passivated, eutectically bonded, fast turn-off thyristor in a TO-220AB envelope, intended for

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HYG053N10NS1P/B Feature  100V/120A RDS(ON)=4.8 mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Halogen-Free Devices Available (RoH

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HYG053N10NS1D/U/V N-Channel Enhancement Mode MOSFET HYG053N10NS1D/U/V Feature HYG053N10NS1D/U/V Pin Description  100V/95A RDS(ON)=5.2mΩ(typ.)@VG

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SKT 553 THYRISTOR BRIDGE,SCR,BRIDGE $+ , $ 2## :## 7## 2## ;## :## $++,- $&+, $ 5## ## 1## 5## <## ## ./+, 0 1## % (     

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isc Thyristors BT153 APPLICATIONS ·It is suitable to fit all modes of control found in applications such as overvoltage crowbar protection,motor con

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HYG053N10NS1D/U/V N-Channel Enhancement Mode MOSFET HYG053N10NS1D/U/V Feature HYG053N10NS1D/U/V Pin Description  100V/95A RDS(ON)=5.2mΩ(typ.)@VG

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INTEGRATED CIRCUITS M253 < LOW POWER DISSIPATION: 120 mW DRIVES 8 SOUND GENERATORS (INSTRUMENTS) 12 PROGRAMMABLE RHYTHMS (ALSO AVAILABLE IN COMBINAT

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N-Channel Enhancement Mode MOSFET HYG053N10NS1C2 Feature HYG053N10NS1C2 Pin Description  100V/95A RDS(ON)=4.6 mΩ(typ.)@VGS = 10V DDDD DDDD  10

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www.DataSheet4U.com Data Sheet No. PD 96946A IRIS-G6353 Features • Oscillator is provided on the monolithic control with adopting On-ChipTrimming te

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HYG053N10NS1D/U/V N-Channel Enhancement Mode MOSFET HYG053N10NS1D/U/V Feature HYG053N10NS1D/U/V Pin Description  100V/95A RDS(ON)=5.2mΩ(typ.)@VG

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CT1775 Universal MacAir/1553 Dumb RTU Hybrid PRELIMINARY DATA SHEET www.aeroflex.com/Avionics FEATURES ❑ ❑ CT1775 Replaces DDC BUS-65201 Includes: -

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Jameco Part Number 41662 This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Mate

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www.DataSheet4U.com 256MBit MOBILE SDR SDRAMs based on 2M x 4Bank x32 I/O Specification of 256M (8Mx32bit) Mobile SDRAM Memory Cell Array - Organiz

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Date:- 17th June, 2014 Data Sheet Issue:- 1 Phase Control Thyristor Types N0530YN220 and N0530YN250 Absolute Maximum Ratings VDRM VDSM VRRM VRSM V

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