HY045N10P (HUAYI)
N-Channel Enhancement Mode MOSFET
HY045N10P/B
Feature Description
100V/120A RDS(ON)= 4.2mΩ(typ.)@VGS = 10V
100% Avalanche Tested Reliable and Rugged Lead Free and Green Device
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HY045N10P/B Feature Description 100V/120A RDS.
N-Channel Enhancement Mode MOSFET
HY045N10P Distributor
