HY045N10P N-Channel Enhancement Mode MOSFET

HUAYI

Description

HY045N10P/B .
100V/120A RDS(ON)= 4. 100% Avalanche Tested. Reliable and Rugged. Lead Free and Green Devices Available (RoHS.

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Datasheet Specifications

Part number: HY045N10P
Manufacturer: HUAYI
File Size: 1.54 MB
Datasheet: HY045N10P-HUAYI.pdf
Description: N-Channel Enhancement Mode MOSFET

Applications

* Switch application
* DC/DC Converter Ordering and Marking Information N-Channel MOSFET P HY045N10 YYXXXJWW G B HY045N10 YYXXXJWW G Package Code P:TO-220FB-3L Date Code YYXXX WW B:TO-263-2L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte ti

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HY045N10P N-Channel Enhancement Mode MOSFET HUAYI

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