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HY045N10B, HY045N10P N-Channel Enhancement Mode MOSFET

HY045N10B Description

HY045N10P/B .
100V/120A RDS(ON)= 4. 100% Avalanche Tested. Reliable and Rugged. Lead Free and Green Devices Available (RoHS.

HY045N10B Applications

* Switch application
* DC/DC Converter Ordering and Marking Information N-Channel MOSFET P HY045N10 YYXXXJWW G B HY045N10 YYXXXJWW G Package Code P:TO-220FB-3L Date Code YYXXX WW B:TO-263-2L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte ti

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: HY045N10B, HY045N10P. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
HY045N10B, HY045N10P
Manufacturer
HUAYI
File Size
1.54 MB
Datasheet
HY045N10P-HUAYI.pdf
Description
N-Channel Enhancement Mode MOSFET
Note
This datasheet PDF includes multiple part numbers: HY045N10B, HY045N10P.
Please refer to the document for exact specifications by model.

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📌 All Tags

N-Channel Enhancement Mode MOSFET HUAYI
HUAYI HY045N10B-like datasheet