HY1001B Datasheet | Specifications & PDF Download

HY1001B N-Channel Enhancement Mode MOSFET

HY1001P/B Feature  70V/80A RDS(ON)= 7.2mΩ(typ.

HY1001P/B Feature  70V/80A RDS(ON)= 7.2mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Lead-Free and Green DevicesAvailable (RoHS

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