HY3210NA2B Datasheet | Specifications & PDF Download

HY3210NA2B N-Channel Enhancement Mode MOSFET

HY3210NA2P/B Feature  100V/120A RDS(ON)=6.7mΩ.

HY3210NA2P/B Feature  100V/120A RDS(ON)=6.7mΩ (typ.) @ VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Lead-Free and Green Devices Availab

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