HY3306P/B N-Channel Enhancement Mode MOSFET Feat.
HOOYI
HY3306P - N-Channel Enhancement Mode MOSFET
HY3306P/B N-Channel Enhancement Mode MOSFET Features • 60V/130A RDS(ON) = 5.4 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Le.
